TPN2R503NC,L1Q
Uimhir Táirge Déantóra:

TPN2R503NC,L1Q

Product Overview

Déantóir:

Toshiba Semiconductor and Storage

Uimhir Páirte:

TPN2R503NC,L1Q-DG

Cur síos:

MOSFET N CH 30V 40A 8TSON-ADV
Cur Síos Mionsonraithe:
N-Channel 30 V 40A (Ta) 700mW (Ta), 35W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Stoc:

Gníomh RFQ Ar Líne
12890532
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Líon
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TPN2R503NC,L1Q Saintréithe Teicniúla

Catagóir
FETs, MOSFETs, Single FETs, MOSFETs
Déantóir
Toshiba Electronic Devices and Storage Corporation
Pacáistiú
-
Sraith
U-MOSVIII
Stádas Táirge
Obsolete
Cineál FET
N-Channel
Teicneolaíocht
MOSFET (Metal Oxide)
Draenáil go Voltas Foinse (Vdss)
30 V
Reatha - Draein Leanúnach (ID) @ 25°C
40A (Ta)
voltas tiomána (max rds ar, min rds ar)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 20A, 10V
Vgs(th) (Uasmhéid) @ Id
2.3V @ 500µA
Muirear Geata (Qg) (Uasmhéid) @ Vgs
40 nC @ 10 V
Vgs (Uasmhéid)
±20V
Toilleas Ionchurtha (Ciss) (Uasmhéid) @ Vds
2230 pF @ 15 V
Gné FET
-
Diomailt Cumhachta (Uasmhéid)
700mW (Ta), 35W (Tc)
Teocht Oibriúcháin
150°C (TJ)
Cineál Gléasta
Surface Mount
Pacáiste Gléas Soláthraí
8-TSON Advance (3.1x3.1)
Pacáiste / Cás
8-PowerVDFN
Bunuimhir Táirge
TPN2R503

Tuilleadh Eolais

Pacáiste Caighdeánach
5,000
Ainmneacha Eile
TPN2R503NCL1QCT
TPN2R503NC,L1Q(M
TPN2R503NCL1QTR
TPN2R503NCL1Q
TPN2R503NCL1QDKR

Rangú Comhshaoil & Eisíoc

Stádas RoHS
RoHS Compliant
Leibhéal Íogaireachta Taise (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUSName
8541.29.0095

Móidail Aiteacha

UIMHIR CODA
TPN2R203NC,L1Q
DEIRMHEACH
Toshiba Semiconductor and Storage
CANTAR DISPONIBLE
5468
DiGi PART NUMBER
TPN2R203NC,L1Q-DG
PRAGHAS AONAD
0.40
TÍP AIONTUITHE
Direct
UIMHIR CODA
AON6358
DEIRMHEACH
Alpha & Omega Semiconductor Inc.
CANTAR DISPONIBLE
2359
DiGi PART NUMBER
AON6358-DG
PRAGHAS AONAD
0.27
TÍP AIONTUITHE
Similar
Teastas DIGI
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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