RN1910,LF(CT
Uimhir Táirge Déantóra:

RN1910,LF(CT

Product Overview

Déantóir:

Toshiba Semiconductor and Storage

Uimhir Páirte:

RN1910,LF(CT-DG

Cur síos:

TRANS 2NPN PREBIAS 0.1W US6
Cur Síos Mionsonraithe:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount US6

Stoc:

5988 Píosaí Nua Dháta Ar Fáil
12889579
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RN1910,LF(CT Saintréithe Teicniúla

Catagóir
Bipolare (BJT), Bipolar Transistor Arrays, Pre-Biased
Déantóir
Toshiba Electronic Devices and Storage Corporation
Pacáistiú
Tape & Reel (TR)
Sraith
-
Stádas Táirge
Active
Cineál Trasraitheora
2 NPN - Pre-Biased (Dual)
Reatha - Bailitheoir (Ic) (Uasmhéid)
100mA
Voltage - Bailitheoir Astaír Miondealú (Max)
50V
Friotóir - Bonn (R1)
4.7kOhms
Friotóir - Bonn Astaithe (R2)
-
DC Gnóthachan Reatha (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Reatha - Cutoff Bailitheoir (Max)
100nA (ICBO)
Minicíocht - Aistriú
250MHz
Cumhacht - Max
100mW
Cineál Gléasta
Surface Mount
Pacáiste / Cás
6-TSSOP, SC-88, SOT-363
Pacáiste Gléas Soláthraí
US6
Bunuimhir Táirge
RN1910

Ríomhleabhar & Doiciméid

Bileoga eolais

Tuilleadh Eolais

Pacáiste Caighdeánach
3,000
Ainmneacha Eile
RN1910LF(CTTR
RN1910(T5LFT)DKR-DG
RN1910(T5LFT)TR-DG
RN1910LF(CTDKR
RN1910(T5LFT)DKR
RN1910(T5L,F,T)
RN1910LF(CTCT
RN1910(T5LFT)CT-DG
RN1910(T5LFT)TR
RN1910,LF(CB
RN1910(T5LFT)CT

Rangú Comhshaoil & Eisíoc

Stádas RoHS
ROHS3 Compliant
Leibhéal Íogaireachta Taise (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUSName
8541.21.0095
Teastas DIGI
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