HN1C01FE-Y,LF
Uimhir Táirge Déantóra:

HN1C01FE-Y,LF

Product Overview

Déantóir:

Toshiba Semiconductor and Storage

Uimhir Páirte:

HN1C01FE-Y,LF-DG

Cur síos:

TRANS 2NPN 50V 0.15A ES6
Cur Síos Mionsonraithe:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6

Stoc:

12889566
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HN1C01FE-Y,LF Saintréithe Teicniúla

Catagóir
Bipolare (BJT), Bipolar Transistor Arrays
Déantóir
Toshiba Electronic Devices and Storage Corporation
Pacáistiú
Tape & Reel (TR)
Sraith
-
Stádas Táirge
Active
Cineál Trasraitheora
2 NPN (Dual)
Reatha - Bailitheoir (Ic) (Uasmhéid)
150mA
Voltage - Bailitheoir Astaír Miondealú (Max)
50V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Reatha - Cutoff Bailitheoir (Max)
100nA (ICBO)
DC Gnóthachan Reatha (hFE) (Min) @ Ic, Vce
120 @ 2mA, 6V
Cumhacht - Max
100mW
Minicíocht - Aistriú
80MHz
Teocht Oibriúcháin
150°C (TJ)
Cineál Gléasta
Surface Mount
Pacáiste / Cás
SOT-563, SOT-666
Pacáiste Gléas Soláthraí
ES6
Bunuimhir Táirge
HN1C01

Ríomhleabhar & Doiciméid

Bileoga eolais

Tuilleadh Eolais

Pacáiste Caighdeánach
4,000
Ainmneacha Eile
HN1C01FE-Y(T5LFTDKR
HN1C01FE-Y(T5LFTTR
HN1C01FE-Y,LF(T
HN1C01FE-YLFCT
HN1C01FE-Y,LF(B
HN1C01FE-YLFTR
HN1C01FE-YLFDKR
HN1C01FE-Y(T5LFTCT
HN1C01FE-Y(T5LFTDKR-DG
HN1C01FE-Y(T5L,F,T
HN1C01FE-Y(T5LFTCT-DG
HN1C01FE-Y(T5LFTTR-DG

Rangú Comhshaoil & Eisíoc

Stádas RoHS
ROHS3 Compliant
Leibhéal Íogaireachta Taise (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUSName
8541.21.0095
Teastas DIGI
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